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Structural study on phosphorus doping of BaSi₂ epitaxial films by ion implantationHARA, K. O; HOSHI, Y; USAMI, N et al.Thin solid films. 2013, Vol 534, pp 470-473, issn 0040-6090, 4 p.Article

Experimental investigation of plasma recovery during the pulse-off time in plasma source ion implantationCHUNG, Kyoung-Jae; BONGKI JUNG; CHOE, Jae-Myung et al.Thin solid films. 2013, Vol 547, pp 13-16, issn 0040-6090, 4 p.Conference Paper

Fabrication and fundamental characterizations of tiled clones of single-crystal diamond with 1-inch sizeYAMADA, Hideaki; CHAYAHARA, Akiyoshi; UMEZAWA, Hitoshi et al.Diamond and related materials. 2012, Vol 24, pp 29-33, issn 0925-9635, 5 p.Article

The effect of helium ion implantation on the relaxation of strained InGaAs thin filmsPAULSON, C. A; JHA, S; SONG, X et al.Thin solid films. 2012, Vol 520, Num 6, pp 2147-2154, issn 0040-6090, 8 p.Article

Role of Lithium Excess and Doping in Li_1+xTi_2―xMn_x(PO₄)₃ (0.00 ≤ x ≤ 0.10)CAPSONI, Doretta; BINI, Marcella; FERRARI, Stefania et al.Journal of physical chemistry. C. 2012, Vol 116, Num 1, pp 1244-1250, issn 1932-7447, 7 p.Article

Effective reduction of AIN defect luminescence by fluorine implantationVETTER, Ulrich; MÜLLER, Sven; BRÖTZMANN, Marc et al.Diamond and related materials. 2011, Vol 20, Num 5-6, pp 782-784, issn 0925-9635, 3 p.Article

Impedance spectroscopic investigation of delocalization effects of disorder induced by Ni doping in LaFeO₃IDREES, M; NADEEM, M; MEHMOOD, M et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 10, issn 0022-3727, 105401.1-105401.12Article

The influences of oxygen ion implantation on the structural and electrical properties of B-doped diamond filmsHU, X. J; YE, J. S; LIU, H. J et al.Diamond and related materials. 2011, Vol 20, Num 2, pp 246-249, issn 0925-9635, 4 p.Article

Improving conversion efficiency of dye-sensitized solar cells by metal plasma ion implantation of ruthenium ionsYEN, Chung-Chih; WANG, Da-Yung; CHANG, Li-Shin et al.Thin solid films. 2011, Vol 519, Num 15, pp 4717-4720, issn 0040-6090, 4 p.Conference Paper

Study of molecular-beam epitaxy growth on patterned GaAs ( 1 0 0) substrates by masked indium ion implantationHUIYING ZHOU; SHENGCHUN QU; PENG JIN et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 572-575, issn 0022-0248, 4 p.Conference Paper

Effect of hydrogenation vs. re-heating on intrinsic magnetization of Co doped In₂O₃SAMARIYA, A; SINGHAL, R. K; SAITOVITCH, E et al.Applied surface science. 2010, Vol 257, Num 2, pp 585-590, issn 0169-4332, 6 p.Article

On the photodissolution kinetics of silver in glassy As₂S₃TSIULYANU, D; STRATAN, I.Journal of non-crystalline solids. 2010, Vol 356, Num 3, pp 147-152, issn 0022-3093, 6 p.Article

Amorphization, recrystallization and end of range defects in germaniumCLAVERIE, A; KOFFEL, S; CHERKASHIN, N et al.Thin solid films. 2010, Vol 518, Num 9, pp 2307-2313, issn 0040-6090, 7 p.Conference Paper

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transportJOHNSON, B. C; MCCALLUM, J. C; WILLEMS VAN BEVEREN, L. H et al.Thin solid films. 2010, Vol 518, Num 9, pp 2524-2527, issn 0040-6090, 4 p.Conference Paper

Ab inirio study of Fe-doped SnO: Local structure and hyperfine interactions at the Fe nucleusERRICO, Leonardo; WEISSMANN, Mariana.The Journal of physics and chemistry of solids. 2009, Vol 70, Num 10, pp 1369-1373, issn 0022-3697, 5 p.Article

Electrical and optical switching properties of ion implanted V0₂ thin filmsHECKMAN, EmilyM; GONZALEZ, Leonel P; GUHA, Shekhar et al.Thin solid films. 2009, Vol 518, Num 1, pp 265-268, issn 0040-6090, 4 p.Article

First-principles super-cell investigation of the rattling effect in Li-doped KClXING GAO; DAW, Murray S.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 4, issn 0953-8984, 045401.1-045401.5Article

Oxide heterogrowth on ion-exfoliated thin-film complex oxide substratesCHEN, Tsung-Liang; KOU, Angela; OFAN, Avishai et al.Thin solid films. 2009, Vol 518, Num 1, pp 269-273, issn 0040-6090, 5 p.Article

Amorphization and graphitization of single-crystal diamond — A transmission electron microscopy studyHICKEY, D. P; JONES, K. S; ELLIMAN, R. G et al.Diamond and related materials. 2009, Vol 18, Num 11, pp 1353-1359, issn 0925-9635, 7 p.Article

Density functional studies of muonium in nitrogen aggregate containing diamond: the Mu_X centreETMIMI, K. M; GOSS, J. P; BRIDDON, P. R et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 36, issn 0953-8984, 364211.1-364211.6Article

Concentration distribution of Yb²⁺ and Yb³⁺ ions in YbF₃:CaF₂ crystalsNICOARA, Irina; PECINGINA-GARJOABA, Nicolae; BUNOIU, Octavian et al.Journal of crystal growth. 2008, Vol 310, Num 7-9, pp 1476-1481, issn 0022-0248, 6 p.Article

Growth of highly sensitive thermoluminescent crystal α-Al₂O₃:C by the temperature gradient techniqueXINBO YANG; HONGJUN LI; YAN CHENG et al.Journal of crystal growth. 2008, Vol 310, Num 16, pp 3800-3803, issn 0022-0248, 4 p.Article

Phase segregation in Pb:GeSbTe chalcogenide systemKUMAR, J; AHMAD, M; CHANDER, R et al.EPJ. Applied physics (Print). 2008, Vol 41, Num 1, pp 13-17, issn 1286-0042, 5 p.Article

Reflectivity modification of polymethylmethacrylate by silicon ion implantationHADJICHRISTOV, Georgi B; IVANOV, Victor; FAULQUES, Eric et al.Applied surface science. 2008, Vol 254, Num 15, pp 4820-4827, issn 0169-4332, 8 p.Article